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| BC847B Transistors NPN General Purpose Transistor BC847B Features 1) BVCEO < 45V (IC=1mA) 2) Complements the BC857B. External dimensions (Unit : mm) 2.90.2 1.90.2 0.95 +0.2 -0.1 0.450.1 Package, marking, and Packaging specifications Part No. Packaging type Marking Code Basic ordering unit (pieces) BC847B SST3 G1F T116 3000 (1) 0.95 0.95 (2) 2.40.2 1.3 -0.1 +0.2 0~0.1 0.2Min. (3) +0.1 0.4 -0.05 +0.1 0.15 -0.06 All terminals have the same dimensions ROHM : SST3 (1) Emitter (2) Base (3) Collector Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature When mounted on a 7x5x0.6mm ceramic board. Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 50 45 6 0.1 0.2 0.35 150 -65 to +150 Unit V V V A W C C Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Transition frequency Collector output capacitance Emitter input capacitance Symbol BVCBO BVCEO BVEBO ICBO VCE(sat) VBE(on) hFE fT Cob Cib Min. 50 45 6 - - - - 0.58 200 - - - Typ. - - - - - - - - - 200 3 8 Max. - - - 15 5 0.25 0.6 0.77 450 - - - Unit V V V nA A V V - MHz pF pF VCE=5V, IE=-20mA, f=100MHz VCB=10V, IE=0, f=1MHz VEB=0.5V, IC=0, f=1MHz IC=50A IC=1mA IE=50A VCB=30V VCB=30V, Ta=150C IC/IB=10mA/0.5mA IC/IB=100mA/5mA VCE/IC=5V/10mA Conditions Rev.A 1/5 BC847B Transistors Electrical characteristic curves The electrical characteristic curves for these products are the same as those of UMT222A, SST222A, MMST2222A and PN2222A. 100 Ta=25C 10.0 IC-COLLECTOR CURRENT (mA) 1.2 1.0 0.8 35 30 IC-COLLECTOR CURRENT (mA) 80 8.0 25 6.0 20 15 10 2.0 5 IB=0A Ta=25C 0 0 2.0 1.0 VCE-COLLECTOR-EMITTER VOLTAGE (V) 0.6 60 0.4 40 0.2 4.0 0.1 20 IB=0mA 0 0 2.0 1.0 VCE-COLLECTOR-EMITTER VOLTAGE (V) Fig.1 Grounded emitter output characteristics ( ) Fig.2 Grounded emitter output characteristics ( ) 1000 Ta=25C hFE-DC CURRENT GAIN VCE=10V 100 1V 5V 10 0.1 1.0 10 IC-COLLECTOR CURRENT (mA) 100 1000 Fig.3 DC current gain vs. collector current ( ) 1000 VCE=5V hFE-DC CURRENT GAIN Ta=125C Ta=25C Ta=-55C 100 10 0.1 1.0 10 IC-COLLECTOR CURRENT (mA) 100 1000 Fig.4 DC current gain vs. collector current ( ) Rev.A 2/5 BC847B Transistors 1000 Ta=25C VCE=5V f=1kHz hFE-AC CURRENT GAIN 100 10 0.01 0.1 1 IC-COLLECTOR CURRENT (mA) 10 100 Fig.5 AC current gain vs. collector current VCE(SAT)COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.16 VBE(ON)BASE EMITTER VOLTAGE (V) Ta=25C IC/IB=10 VBE(SAT)BASE EMITTER SATURATION VOLTAGE (V) 0.18 1.8 1.6 Ta=25C IC/IB=10 1.8 1.6 Ta=25C VCE=5V 0.12 1.2 1.2 0.08 0.8 0.8 0.04 0.4 0.4 0 0.1 1.0 10 IC-COLLECTOR CURRENT (mA) 100 0 0.1 1.0 10 IC-COLLECTOR CURRENT (mA) 100 0 0.1 1.0 10 IC-COLLECTOR CURRENT (mA) 100 Fig.6 Collector-emitter saturation voltage vs. collector current Fig.7 Base-emitter saturation voltage vs. collector current Fig.8 Grounded emitter propagation characteristics 1000 Ta=25C IC/IB=10 1000 Ta=25C IC/IB=10 1000 40V 3V Ta=25C IC=101B1=101B2 ton-TURN ON TIME (ns) tS-STORAGE TIME (ns) tr-RISE TIME (ns) VCE=15V VCC=40V 100 100 100 10 1.0 10 IC-COLLECTOR CURRENT (mA) 100 10 1.0 10 IC-COLLECTOR CURRENT (mA) 100 10 1.0 10 IC-COLLECTOR CURRENT (mA) 100 Fig.9 Turn-on time vs. collector current Fig.10 Rise time vs. collector current Fig.11 Storage time vs. collector current Rev.A 3/5 BC847B Transistors VCE COLLECTOR-EMITTER VOLTAGE (V) 1000 Ta=25C VCC=40V IC=101B1=101B2 100 Ta=25C f=1MHz 50 100MHz 200MHz 300MHz 400MHz Ta=25C CAPACITANCE (pF) 400MHz tf -FALL TIME (ns) 100 10 Cib 5.0 300MHz 200MHz 100MHz Cob 10 1.0 10 IC-COLLECTOR CURRENT (mA) 100 1 0.5 1 10 REVERSE BIAS VOLTAGE (V) 50 0.5 0.5 10 100 IC-COLLECTOR CURRENT (mA) 500 Fig.12 Fall time vs. collector current Fig.13 Input/output capacitance vs. voltage Fig.14 Gain bandwidth product ICBO-COLLECTOR CUTOFF CURRENT (A) 1000 CURRENT GAIN-BANDWIDTH PRODUCT (MHz) h PARAMETER NORMALIZED TO 1mA Ta=25C VCE=5V 100 Ta=25C VCE=6V f=270Hz hoe 10n VCB=30V 1n 10 hie hre hfe hre 100P 100 hfe IC=1mA hie=7.8k hfe=280 hie hre=4.5x10-5 hoe=7.5S 100 10P 1 hoe 0.1 0.1 1P 10 0.5 1.0 10 100 IC-COLLECTOR CURRENT (mA) 500 1 10 IC-COLLECTOR CURRENT (mA) 0.1P 0 25 50 75 100 125 TA-AMBIENT TEMPERATURE (C) 150 Fig.15 Gain bandwidth product vs. collector current Fig.16 h parameter vs. collector current Fig.17 Collector cutoff current 12 10 RS-SOURCE RESISTANCE () NF NOISE FIGURE (dB) Ta=25C VCE=5V IC=100A RS=10k 100k Ta=25C VCE=5V f=10Hz dB 12 B 8d B 5d 3d B d =1 NF B 10k 8 6 4 2 0 10 1k 100 1k f-FREQUENCY (Hz) 10k 100k 100 0.01 0.1 1 IC-COLLECTOR CURRENT (mA) 10 Fig.18 Noise vs. collector current Fig.19 Noise characteristics ( ) Rev.A 4/5 BC847B Transistors 100k RS-SOURCE RESISTANCE () RS-SOURCE RESISTANCE () RS-SOURCE RESISTANCE () Ta=25C VCE=5V f=30Hz 100k 100k 8d B 12 dB 12 B 8d B 5d B 3d dB =1 NF 5d B 8d dB 10k Ta=25C VCE=5V f=1kHz 10k 5d Ta=25C VCE=5V f=10kHz 10k 3d d =1 NF 3d B d =1 NF B B B B B 1k 1k 1k 100 0.01 0.1 1 IC-COLLECTOR CURRENT (mA) 10 100 0.01 1 0.1 IC-COLLECTOR CURRENT (mA) 10 100 0.01 0.1 1 IC-COLLECTOR CURRENT (mA) 10 Fig.20 Noise characteristics ( ) Fig.21 Noise characteristics ( ) Fig.22 Noise characteristics ( ) Rev.A 5/5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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